transistor(pnp) features z low v ce(sat) . z complements the 2sd1766 maximum ratings (t a =25 unless otherwise noted) symbol parameter value units v cbo collector-base voltage -40 v v ceo collector-emitter voltage -32 v v ebo emitter-base voltage -5 v i c collector current -continuous -2 a p c collector power dissipation 500 mw t j junction temperature 150 t stg storage temperature -55-150 electrical characteristics (tamb=25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br)cbo i c =-50 a , i e =0 -40 v collector-emitter breakdown voltage v (br)ceo i c = -1ma , i b =0 -32 v emitter-base breakdown voltage v (br)ebo i e =-50 a, i c =0 -5 v collector cut-off current i cbo v cb =-20 v , i e =0 -1 a emitter cut-off current i ebo v eb =-4 v , i c =0 -1 a dc current gain * h fe v ce =-3v, i c = -0.5a 82 390 collector-emitter saturation voltage * v ce(sat) i c =-2a, i b = -0.2a -0.8 v transition frequency f t v ce =-5v, i c =-0.5a ,f=30mhz 100 mhz output capacitance c ob v cb =-10v, i e =0 ,f=1mhz 50 pf * measured using pulse current. classification of h fe rank p q r range 82-180 120-270 180-390 marking bcp bcq bcr sot-89 1. base 2. collector 3. emitter 1 2 3 1 date:2011/05 www.htsemi.com semiconductor jinyu 2sb1 1 8 8
typical characteristics 2 date:2011/05 www.htsemi.com semiconductor jinyu 2sb1 1 8 8
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